Oxford Instruments unveils ALD plasma processing system for 2D materials

The wide parameter space offered by the system allows the growth of 2D transition-metal dichalcogenides at lower temperatures than employed in chemical vapor deposition (CVD) furnaces. First results on the growth of 2D MoS2 material by ALD at 450°C and lower temperatures were presented by Eindhoven researchers on 16 July at the 17th International Conference on Atomic Layer Deposition (ALD 2017) in Denver, CO, USA. Plasma-enhanced…

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